Nicolas EYER

Abstract: The applicant will design a 100Gbs G-Band transmitter in SiGe 500GHz Fmax process BiCMOS55X from ST. The transmitter input are 2 times 50Gbs-D-Band 16GHz-Bandwidth 16QAM inputs. Circuit is designed and samples will be available. The G-Band transmitter will operate the up conversion to the 250-300GHz band by up-Mixer and the Wide band Power-Amplifier, including all passives power combining and adaptation needed by the design. The transmitter will integrate a ''phase array'' function. The PA output will deliver power to wide G-Band band Antenna. During the PHD study, the applicant will also do InP HBT PA simulations in order to evaluate technical added value of InP material versus SiGe material.