Mohammad ALSUKOUR

In order to adapt to new application needs such as high-performance computers, memories (Samsung/Intel/Huawei), microled screens and imagers (Aledia, ST), 3D interconnects must be able to be integrated with a thermal budget of less than 400°C. The current manufacturing temperature of 400°C for hybrid bonding levels is too high to be compatible with these new requirements. A new low-temperature integration of these levels involving the development of new materials is therefore necessary. In this topic, we will seek to implement this 3D integration on LETI's microelectronics r&d platform.The thesis focuses on the definition and manufacture of 3D interconnects for millimeter-scale components. The first step will be to use simulation to define the routing needed to minimize losses in interconnections between a MOS circuit and another transistor for amplification functions such as PA or LNA. Then, in the second stage, electrical characterization and realization will validate the hypotheses and produce models dedicated to these applications.