MEDBOUHI Mohammed

Abstract: This thesis addresses the electrical characterization and measurement-driven small-signal modeling of AlGaN/GaN-on-Si HEMTs, and evaluates the impact of 3D heterogeneous integration on their performance. The work implements PIV, DC and RF measurement protocols, extracts the device's key figures of merit, and interprets these results through small-signal modeling for Ka-band RF power-amplifier applications. The second part examines the integration of GaN HEMTs into a 3D heterogeneous architecture based on a silicon interposer, and assesses how this integration affects the device's electrical and thermal performance.