Deni Germani ALVES NETO

Integrated circuit (IC) design requires MOSFET models that balance complexity with accuracy. IC designers often rely on oversimplified MOSFET models of traditional textbooks that are only valid in specific regions of operation. In contrast, for IC simulation, accurate BSIM models provided by most PDKs are highly complex, with hundreds of parameters. Bridging the gap between the oversimplified inaccurate models and the extremely complex ones used in simulation is crucial for efficient IC design, particularly in the pre-simulation phase.
This thesis will present ACM2, a minimalist MOSFET model compatible with proprietary and open-source simulators such as Spectre and Ngspice. ACM2 is a comprehensive model that provides single-piece expressions for all DC characteristics and small-signal equations across all regions (from weak to strong inversion, and from triode to saturation), ensuring a broad coverage in the IC design space. The DC model of ACM2 comprises only three long-channel parameters (threshold voltage, specific current, and slope factor) and two short-channel parameters (drain-induced barrier lowering and velocity saturation).
The thesis will present the application of ACM2-based methodologies to basic building blocks such as inverters, current mirrors, and current sources, as well as analog/RF IC design examples, especially a low-frequency amplifier, an RF low-noise amplifier, and a voltage-controlled oscillator.
Finally, the strategy for developing the doctorate thesis project is the following: the development of the ACM2 equations, optimization of the parameter extraction procedure, implementation of the model in simulators, data analysis, and collection through comparison to industrial models (BSIM, UTSOI2, and PSP), and design of a chip test to validate the model in actual silicon devices.