Gustavo Adolfo PALOMINO MARCELO

Abstract: In the millimeter-wave (mmWave) frequency range several unlicensed frequency bands are being selected for point-to-point high-bandwidth communication links. These multi-gigabit links will be crucial for the infrastructure of the emerging RF, mmWave and THz consumer applications serving the markets of high-speed telecommunications systems (next generations of mobile communication, 6G and beyond), 77GHz/120GHz automotive radars, mmW Imaging and high sensitivity radar sensors. In this context, this work proposes the development of interconnects solutions for mmWave frequency range. These interconnects will approach in CPW suspended for embedded chip technology and microbumps (copper pillar with tin/lead cap) for flip-chip technology. Each interconnect type comes with its unique set of challenges, such as planarization between the chip and the interposer, as well as aligning the chip to the pads on the substrate, are some problems in embedded chip and flip-chip technologies. These interconnects will communicate chip tests with the Metallic-nanowire-Membrane (MnM) and CMOS used like interposers for the development of differents 2D/2.5D heterogeneous integration configurations. The MnM technology has proved to be an excellent alternative for mmWave passive devices development and for Through-MnM-Vias fabrication by copper electrodeposition process, this is a simple and low-cost process. The CPW suspended measurements shows results in agreement with the state of art for embedded interconnects. Additionally, the fabrication of copper pillar with tin/lead cap demonstrates good mechanical stability.
Therefore, the results obtained in this work for the interconnects indicate promising expectations for 2D/2.5D heterogeneous integration.