Seminar by Pr. Eva Dupont-Ferrier (Sherbrooke University): "Leveraging CMOS industrial devices for silicon-based quantum computation"

"Leveraging CMOS industrial devices for silicon-based quantum computation"

By Pr. Eva DUPONT-FERRIER
Département de Physique, Université de Sherbooke, 2500 bd université J1K2R1, Sherbrooke, Québec Canada
Institut quantique, 2500 bd université J1K2R1, Sherbrooke, Québec Canada

Biography
Eva Dupont-Ferrier is an associate Professor of Physics at Université de Sherbrooke, Québec Canada. She is an expert in quantum systems with special interest in spin in semiconductor devices, superconducting circuits, hybrid spin-superconductor systems and cryoelectronics. She was awarded the Bloch prize for her work on topologically protected superconducting circuits, was co-recipient of the ICPS best paper award for her work on coupled-atoms-transistor and was awarded a Marie Sklodowska-Curie Individual Experienced Researcher Fellowship to build original hybrid quantum system combining spin and superconducting circuits, resulting in demonstration of high quality factor superconducting resonator resilient to magnetic field. She is involved in several EDI initiatives. Building on her expertise with microelectronics foundries, she leads since 2018 at USherbrooke & Institut quantique a research effort with IMEC to develop spin-based quantum architectures based on commercial micro-electronics technology. She also collaborates with STMicroelectronics on the development of ultimate transistors for quantum information processing as well as efficient devices designed for cryoelectronics.

Abstract
Silicon-based spin devices appear as a very promising route for quantum computation. 
The excellent intrinsic properties of the (purified) host material guarantee very long spin coherence times and electrical manipulation allows fast gate operation.
The compatibility of silicon devices with the microelectronics industry fablines potentially grant advanced reliable standardized process with low variability of the spin-devices that can be integrated in a large scale platform with co-integration of on-chip control electronics.
Up to now the practical implementation of a full integration of high quality quantum devices and control cryoelectronics on an industry-based platform remains challenging.
In this talk I will review our recent advances on the development and measurements of silicon-based spin devices fabricated in an industrial 300mm fabline.  State-of-the-art gate stack for devices reproducibility and low charge noise operation is established. I will present our results on devices operating in a single dot and double dot regime with integrated SETs for state readout, investigation of orbital effects probed by magnetospectroscopy and single shot spin readout performances. 
I will then show our recent advances in readout of these devices using radiofrequency reflectometry measurement with in-situ tuning at low temperature. This technique is of particular interest for the implementation of scalable devices as well as for fast and sensitive measurements.
Last, I will show how these devices can be combined with other silicon devices for cryocontrol applications. I will review several geometries of devices (GAA, Nanosheet,…) investigated, with both n-type and p-type, and the evolution of their performances with temperature. In particular, I will review essential metrics of the device parameters at low temperature for  integration as cryoelectronic component.