Tommaso MELIS

The objective of this thesis is to create a new method by the means of the developement of authomatic tools, which allow a comparison without the golden unit. The goal is to automate global methods by simulation of light emitting mechanisms of transistors and laser stimulation. The diagnosis will be based on the electrical simulation of the circuit with its test which is available for analog devices and mixed digital analogue and reconstruction of the quantitative image of light emission or stimulation, followed by an automatic comparison to the images acquired on the sample. This will increase the efficiency of the simulation differences compared to the failed parts.
This method will be mainly applied to defect imaging techniques: OBIRCH, LVI.
Concerning the probing methods, this study will allow the analyst to backtrace the signals indicating the failure, starting from the electrical simulations realized at the top.
To optimize the path to follow, we propose to use diagnostic methods currently under development based on fault simulation. The layout of the simulation of the internal nodes with the measurement done will then make it possible to go back to the faulty nodes with a better precision.
In the end, the inductives method (from cause to effects) based on the tracking of critical paths and not on the simulation of the defect will be explored.