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RF design methodology based on MOS transistors for circuit / technology optimization

Integrated Circuits, ACM and EKV Model, 28 FDDSOI, Mos

Proposal of a design methodology capable of preserving the link between circuit performance and technology parameters, in particular by using compact analytical models valid in all transistor operating regions. Demonstration of the relevance of this methodology by applying it to one (or more) RF circuits. Design and measurement using advanced technology such as 28FD-SOI.


Thesis director: Sylvain BOURDEL
Thesis started on: Oct. 2019
Thesis defence: 30/03/2023
Doctoral school: EEATS

Submitted on January 12, 2022

Updated on May 5, 2023