RF design methodology based on MOS transistors for circuit / technology optimization
Integrated Circuits, ACM and EKV Model, 28fdsoi, Mos
Proposal of a design methodology capable of preserving the link between circuit performance and technology parameters, in particular by using compact analytical models valid in all transistor operating regions. Demonstration of the relevance of this methodology by applying it to one (or more) RF circuits. Design and measurement using advanced technology such as 28FD-SOI.
Mis à jour le 8 February 2022