RF design methodology based on MOS transistors for circuit / technology optimization
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Integrated Circuits, ACM and EKV Model, 28 FDDSOI, Mos
Proposal of a design methodology capable of preserving the link between circuit performance and technology parameters, in particular by using compact analytical models valid in all transistor operating regions. Demonstration of the relevance of this methodology by applying it to one (or more) RF circuits. Design and measurement using advanced technology such as 28FD-SOI.
Informations
Thesis director: Sylvain BOURDEL
Thesis started on: Oct. 2019
Thesis defence: 30/03/2023
Doctoral school: EEATS
Thesis started on: Oct. 2019
Thesis defence: 30/03/2023
Doctoral school: EEATS
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