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Mm-wave through-load element for on-wafer measurement applications

Auteur(s) : M. Margalef-Rovira, O. Occello, A. Saadi, V. Avramovic, S. Lepilliet, L. Vincent, M. Barragan, E. Pistono, S. Bourdel, C. Gaquière, P. Ferrari

Journal : IEEE Transactions on Circuits and Systems

Pages : 1-14

Doi : 10.1109/TCSI.2021.3072097

This paper presents an innovative Through-Load element aimed at characterization applications at mm-wave frequencies. The proposed structure can behave as a Through connection or as a 50-Ω load depending on a DC control voltage. Among other potential applications, this system can be used to implement a transfer switch or an attenuator. A demonstrator was fabricated and measured in the STM 55-nm BiCMOS technology. Over a wide bandwidth, from 55 GHz up to 170 GHz, experimental measurements demonstrate a maximum 1.6-dB of insertion loss when behaving as a Through connection and a minimum 14-dB of insertion loss when behaving as a 50-Ω load. In both cases, the return loss is better than 10 dB. The insertion loss at 90 GHz is 0.6 dB for the Through connection and 20 dB for the 50-Ω load connection.