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New Insight about Oxide Breakdown Occurrence at Circuit Level

Auteur(s) : M. Saliva, F. Cacho, V. Huard, D. Angot, M. Durand, X. Federspiel, M. Parra, A. Bravaix, L. Anghel, P. Blanc-Benon

Doc. Source: IEEE International Reliability Physics Symposium (IRPS'14)

Lifetime extension based on device level parameters dr ift is difficult to handle, an accurate BD model is thus mandatory for predictive simulation at circuit leve l. For the first time, a dedicated digital circuit has been designed to track multiple BD events. This circu it (called Flipper) has been used to enhance BD of custom cells. Measurements of BD time, delay and Id dq are compared with BD results obtained at device level to simulation