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Electromigration degradation mechanism analysis of SnAgCu interconnects for eWLB package

Auteur(s) : T. Frank, C. Chappaz, L. Arnaud, X. Federspiel, F. Colella, E. Petitprez, L. Anghel

Doc. Source: International Reliability Physics Symposium (IRPS'12)

Publisher : IEEE

Doi : 10.1109/IRPS.2012.6241792

This paper focuses on electromigration of SnAgCu interconnects of Fanout embedded Wafer Level Ball Grid Array (FO-eWLB) technology. Black's parameters are analyzed regarding stage of degradation through approaches based on resistance slope modeling and on Failure Criterion (FC).