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Experimental demonstration of pattern influence on DRAM SEU & SEFI radiation sensitivities

Auteur(s) : A. Bougerol, F. Miller, N. Guibbaud, R. Leveugle, T. Carriere, N. Buard

Doc. Source: European Conference on Radiation and its Effects on Components and Systems (RADECS'10)

This paper investigates the influence of the pattern regarding SEU and SEFI sensitivities for three DRAM technologies from 210 nm to 90 nm. Thanks to laser and accelerated tests, it is demonstrated that “random” pattern is the most appropriate for latest devices.