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AlGaN/GaN heterostructure based surface acoustic wave structures for chemical sensors

Auteur(s) : T. Lalinsky, L. Rufer, G. Vanko, S. Mir

Doc. Source: 11th International Conference on the Formation of Semiconductor Interfaces (ICFSI’07)

We present a new approach in forming interdigital surface acoustic wave (SAW) structures on AlGaN/GaN heterostructure to be applied in chemical sensors technology. This approach uses a selective self-aligned SF6 plasma treatment of the AlGaN/GaN barrier layer to modify 2DEG density thus enabling the redistribution of the E-field and the reduction of the peak field in the range of SAW structures. The initial results in the process technology and characterization are presented for the first time.