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Dr. Man WONG, Hong Kong University of Science and Technology

Theme: Low-Temperature Electroplating Technology for Integrated Micro-Systems
Date: vendredi 9 juillet 2004, à 11h00, Entrée R de l'INPG (du Bâtiment P)


Man Wong was born in Beijing, China. He attended primary and secondary schools in Hong Kong and completed his tertiary education in the USA. From 1979 to 1984, he studied at the Massa-chusetts Institute of Technology, where he obtained his BS and MS degrees in Electrical Engineering. From 1985 to 1988, he was at the Center for Integrated Systems at Stanford Uni-versity, where he worked on tungsten gate MOS technology and obtained his PhD degree, also in Electrical Engineering. He then joined the Semiconductor Process and Design Center of Texas Instruments, Texas, USA and worked on the modeling and development of integrated-circuit metallization systems and dry/vapor surface-conditioning processes. In 1992, he joined the faculty of the Department of Electrical and Electronic Engineering at the Hong Kong University of Sci-ence and Technology, Hong Kong. His current research interests include micro-fabrication technology, device structure and material, thin-film transistor, organic light-emitting diode, dis-play technology and integrated micro-system. He is a member of Tau Beta Pi, Eta Kappa Nu and Sigma Xi. In 2003, he was appointed an Honorary Guest Professor of Nankai University, Tianjin, China.


The advantages of micro-fabrication are miniaturization and low-cost batch production. Fur-thermore, if the respective fabrication processes are compatible, micro-mechanical and micro-electronic devices can be integrated in one continuous micro-fabrication sequence. A low-temperature metal electroplating technology is presently described. The low-temperature allows modular integration and packaging of a variety of metallic, hence conducting, mechanical micro-structures on processed active substrates containing pre-fabricated micro-electronic sig-nal-processing circuits. Electroplating allows the formation of films with thickness (hence structural height) not readily achievable using conventional surface micro-fabrication techniques. Packaging is based on the electroplating of a metallic “sealant” on a separate “lid wafer” and its subsequent bonding to a “device wafer” containing electroplated mechanical and other mi-cro-components. Separate and non-interfering photoresist-molded electroplating processes are seamlessly integrated in one fabrication flow, with the height of the mechanical micro-devices and that of the package cavity independently controlled. Application of the technology to the realization of inertia micro-switch, mechanical power micro-scavenger and capacitive micro-phone is described.