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Prof. Kazuya Masu , Precision and Intelligence Laboratory, Tokyo Institute of Technology

Theme: GHz Interconnect in Multilevel ULSI Interconnection
Date: Lundi 27 octobre 2003, 11 h 30, Salle Polyvalente de l’INPG


Kazuya Masu graduated Kobe Technical College in 1975 and received BS, MS and Ph.D degrees from Tokyo Institute of Technology in 1977, 1979, and 1982, respectively. From 1982 to 2000, he has been with Research Institute of Electrical Communication, Tohoku University as an Assistant Professor and Associate Professor. In 2000, he moved to Precision and Intelligence Laboratory, Tokyo Institute of Technology as a Professor. His current research topics are GHz interconnect technology on Si ULSI, RF reconfigurable circuit technology based on variable passive components, in vivo wireless communication technology, and metal CVD technology for ULSI multilevel metallization.


For the data transmission speed of over GHz on cm-oder Si ULSI chip, the global interconnect should be designed and implemented using the transmission line theory based on the circuit theory. In this lecture, we will discuss the present topics relating to GHz interconnect. (1) Prediction and evaluation of LSI chip performance based on the interconnect length distribution (ILD). Theoretical derivation of ILD of system LSI is discussed. From the view point of wire length distribution, logic block should be placed on the center of the chip to reduce the long wire length interconnect, and this leads the reduction of power consumption. The method how to extract ILD from CAD data and the comparison of real chip’s wire length distributions and ILD from the theory is discussed. (2) Feasibility study of designing the transmission line interconnects is discussed. Diagonal transmission line interconnect on multilevel interconnect with cross talk endurance is discussed based on the 3D EM simulation results. Some experimental results of wire characteristics are also discussed. (3) Relating to RF analog circuit technology which is the hottest topic in our group, variable RF inductor and the reconfigurable RF circuit will be discussed.