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Gary SWIFT, California Institute of Technology, Passadena, California.

Theme: Measurements of the PowerPC750 Upset Susceptibility to Protons and Heavy Ions
Date: vendredi 15 septembre 2000 A 16H00

Biography

Gary M. Swift received his B.S. in engineering physics from the University of Oklahoma in 1975 and did graduate his work in nuclear engineering at the University of Illinois at Urbana-Champaign. He joined the Jet Propulsion Laboratory in 1991, and is a Senior Member of the Radiation Effects Group of the Electronic Parts Engineering Office. He has published more than 20 refereed papers, including work on dielectric rupture in commercial DRAMs and field-programmable gate arrays used on spacecraft. He has a broad range of single event, total dose and dosimetry interests with particular emphasis on efficient radiation screening of commercial microelectronics for space applications, microdosimeters, mitigation techniques for radiation effects in space, and understanding the physical mechanisms of radiation effects in emerging microelectronics. Gary and other Radiation Group members received the JPL/NASA Excellence Award in 1998. They also received the Outstanding Paper Award at the 1999 Nuclear and Space Radiation Effects Conference for their paper, entitled “Angular and Energy Dependence of Proton Upset in Optocouplers,” which explained how direct ionization from protons increases the upset rate in optocouplers.

Abstract

Samples of the Motorola PowerPC750, an advanced commercial processor and attractive candidate for space applications, have been irradiated with energetic protons and heavy ions to study resulting single event effects. While no latchups occurred, the registers and caches were soft to upset from both, and a variety of lockups were observed. A simple and powerful test technique, dubbed the « pin wiggler », is highlighted, and the results are compared with those from a more conventional register testing methodology.