Research

RIS

Robust Integrated Systems
since 2015


Research topics

photo RIS

RIS addresses the fundamental challenges induced by aggressive nanometric scaling, including: high defect densities caused by increasing process, voltage and temperature variations, accelerated aging, EMI and soft errors; as well as stringent power constraints imposed by fast increasing power densities and temperatures, and battery-life requirements in mobile applications.
To address these challenges, the RIS group works at multiple levels of system architecture for developing robust design approaches (and tools for their qualification), including: circuit, bloc, microarchitecture, array-level, and software. Our goals are multiple, and concern the development and use of self-healing and self-adapting approaches for: mitigating fabrication faults (in particular those induced by process variations), to improve fabrication yield; mitigating field failures (in particular those induced by aging) to increase product lifetime, as well as those induced by voltage and temperature variations, EMI and soft errors to improve reliability; operating the circuits at aggressively low voltage levels to aggressively reduce power.

Team leader

VELAZCO Raoul

Last publications

Gizopoulos D., Alexandrescu D., Nicolaidis M. (Eds.), Guest Editorial: Robust System Design - IEEE International On-Line Testing and Robust System Design Symposium (IOLTS) 2018, IEEE Transactions on Device and Materials Reliability, Vol. 19 - Issue 1, pp. 3-5, Ed. IEEE, 2019
 
Vargas V., Ramos P., Velazco R., Evaluation by Neutron Radiation of the NMR-MPar Fault-Tolerance Approach Applied to Applications Running on a 28-nm Many-Core Processor, Electronics Letters, Ed. IEEE, Vol. 7, No. 11, DOI: 10.3390/electronics7110312, 2018
 
Charif A., Coelho A., Ebrahimi M., Bagherzadeh N., Zergainoh N.-E., First-Last: A Cost-Effective Adaptive Routing Solution for TSV-Based Three-Dimensional Networks-on-Chip, IEEE Transactions on Computers, Ed. IEEE, Vol. 67, No. 10, pp. 1430-1444, DOI: 10.1109/TC.2018.2822269, 2018
 
Franco F., Clemente J.A., Mecha H., Velazco R., Influence of Randomness during the Interpretation of Results from Single-Event Experiments on SRAMs (Early Access), IEEE Transactions on Device and Materials Reliability, Vol. , DOI: 10.1109/TDMR.2018.2886358, 2018
 
Papavramidou P., Nicolaidis M., Iterative Diagnosis Approach for ECC-based Memory Repair (Early Access), IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Ed. IEEE, Vol. , DOI: 10.1109/TCAD.2018.2887052, 2018
 
Annual activity report