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Surface acoustic wave excitation on SF6 plasma treated AlGaN/GaN heterostructure

Author(s): T. Lalinsky, L. Rufer, G. Vanko, I. Ryger, S. Hascik, M. Tomaska, Z. Mozolova, A. Vincze

Doc. Source: The 7th International Conference Advanced Semiconductor Devices Microsystems (ASDAM’08)

Publisher: IEEE

Pages: 311-314

Doi : 10.1109/ASDAM.2008.4743346

We present a new modified approach in the forming of interdigital transducers (IDTs) on AlGaN/GaN heterostructure fully compatible with the process technology of HEMTs. The modified approach uses a shallow recess-gate plasma etching of AlGaN barrier layer in combination with "in-situ" SF6 surface plasma treatment under Schottky gate fingers of IDTs. It enables to excite surface acoustic wave (SAW) in the AlGaN/GaN heterostructure without any high external bias voltages needed to apply to the IDTs. The initial results in the process technology and characterization are presented.