TARANTO

 
 
 
 

Objectives

TowARds Advanced bicmos NanoTechnology platforms for rf to the applicatiOns

The project proposal TARANTO targets to break the technological barriers to the development of next generation BiCMOS technology platforms, combining improved radio-frequency performance of SiGe Heterojunction Bipolar Transistors (HBT) with the high level of integration of advanced CMOS processes.

The main objectives of this project will be the development of HBTs offering high maximum oscillation frequency Fmax of 600 GHz and their integration in high-density CMOS processes: 90nm at Infineon and 28nm at ST Microelectronics.